Optoelectronic Gain Control of a Microwave Single Stage GaAs MESFET Amplifier
نویسنده
چکیده
The computed maximum a v a i l a b l e g a i n (MAG) and c u r r e n t g a i n (Ih211) from t h e de-embedded s-parameters show t h a t MAG i s unaffected by o p t i c a l i l l u m i n at i o n , however, Ih211 increases by more than 2 dB under o p t i c a l i l l u m i n a t i o n o f 1.5 mW. g a i n c u t o f f frequency (F t) o b t a i n e d by e x t r a p o l a t i n g t h e MAG and Ih21 I curves r e s p e c t i v e l y show t h a t t h
منابع مشابه
GAAS Conference P1-136
This paper shows the results of research on the optical control of a GaAs chip monolithic amplifier, and is an extension of previous work by our group in the field of optical-microwave interaction [1-3]. The amplifier was originally designed for the transmitter stage of an indoor mobile communications system in the 2.4 GHz band. The possibilities of optical control of this amplifier are evidenc...
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